Gd disilicide nanowires attached to Si(111) steps

Details Gd disilicide nanowires attached to Si(111) steps Gd disilicide nanowires attached to Si(111) steps

2002-05-02

arxiv.org/abs/cond-mat/0205025v3

Nanotechnology 13 (2002)545-7

Physics

Condensed Matter

3 pages including 4 figures

Scientific paper

10.1088/0957-4484/13/4/319

Self-assembled electronic devices, such as quantum dots or switchable molecules, need self-assembled nanowires as connections. We explore the growth of conducting Gd disilicide nanowires at step arrays on Si(111). Atomically smooth wires with large aspect ratios are formed at low coverage and high growth rate (length >1 micron, width 10nm, height 0.6nm). They grow parallel to the steps in the [-1 1 0 ] direction, which is consistent with a lattice match of 0.8% with the a-axis of the hexagonal silicide, together with a large mismatch in all other directions. This mechanism is similar to that observed previously on Si(100). In contrast to Si(100), the wires are always attached to step edges on Si(111) and can thus be grown selectively on regular step arrays.

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