Gauge factor enhancement driven by heterogeneity in thick-film resistors

Details Gauge factor enhancement driven by heterogeneity in thick-film resistors Gauge factor enhancement driven by heterogeneity in thick-film resistors

2000-10-12

arxiv.org/abs/cond-mat/0010181v1

Physics

Condensed Matter

Disordered Systems and Neural Networks

6 pages with 2 figures. Submitted to Journal of Applied Physics

Scientific paper

10.1063/1.1376672

We present a simple picture of the gauge factor (GF) enhancement in highly heterogeneous materials such as thick-film resistors. We show that when the conducting phase is stiffer than the insulating one, the local strains within this latter are enhanced with respect to the averaged macroscopic strain. Within a simple model of electron tunneling processes, we show that the enhanced local strain leads to values of GF higher than those expected for a homogeneous system. Moreover we provide formulas relating the enhancement of GF to the elastic and microstructural characteristics of TFRs.

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