Gated Spin Transport through an Individual Single Wall Carbon Nanotube

Details Gated Spin Transport through an Individual Single Wall Carbon Nanotube Gated Spin Transport through an Individual Single Wall Carbon Nanotube

2005-10-05

arxiv.org/abs/cond-mat/0510112v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

14 pages, 5 figures

Scientific paper

10.1063/1.2164367

Hysteretic switching in the magnetoresistance of short-channel, ferromagnetically contacted individual single wall carbon nanotubes is observed, providing strong evidence for nanotube spin transport. By varying the voltage on a capacitively coupled gate, the magnetoresistance can be reproducibly modified between +10% and -15%. The results are explained in terms of wave vector matching of the spin polarized electron states at the ferromagnetic / nanotube interfaces.

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