Gated Conductance of Thin Indium Tin Oxide - The Simplest Transistor

Details Gated Conductance of Thin Indium Tin Oxide - The Simplest Transistor Gated Conductance of Thin Indium Tin Oxide - The Simplest Transistor

2012-04-01

arxiv.org/abs/1204.0169v1

Physics

Condensed Matter

Materials Science

25 pages, 7 figures

Scientific paper

Transistors are the fundamental building block of modern electronic devices. So far, all transistors are based on various types of semiconductor junctions. The most common bipolar-junction transistors and metal-oxide-semiconductor field-effect transistors contain p-n junctions to control the current, depending on applied biases across the junctions. Thin-film transistors need metal-semiconductor junctions for injecting and extracting electrons from their channels. Here, by coating a heavily-doped thin indium-tin-oxide (ITO) film through a shadow mask onto a biopolymer chitosan/ITO/glass substrate, we can have a high-performance junctionless transparent organic-inorganic hybrid thin film transistor. This could be the simplest transistor in the world, to our knowledge, not only in its structure, but also its fabrication process. In addition, the device performance is found to be greatly enhanced using a reinforced chitosan/SiO2 hybrid bilayer dielectric stack. Our results clearly show that this architecture can lead to a new class of low-cost transistors.

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