Gate-voltage dependence of Kondo effect in a triangular quantum dot

Details Gate-voltage dependence of Kondo effect in a triangular quantum dot Gate-voltage dependence of Kondo effect in a triangular quantum dot

2008-08-26

arxiv.org/abs/0808.3496v2

J. Phys.: Conference Series 150 (2009) 022067

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figs: typos just below (4) are corrected, results are not affected

Scientific paper

10.1088/1742-6596/150/2/022067

We study the conductance through a triangular triple quantum dot, which are connected to two noninteracting leads, using the numerical renormalization group (NRG). It is found that the system shows a variety of Kondo effects depending on the filling of the triangle. The SU(4) Kondo effect occurs at half-filling, and a sharp conductance dip due to a phase lapse appears in the gate-voltage dependence. Furthermore, when four electrons occupy the three sites on average, a local S=1 moment, which is caused by the Nagaoka mechanism, is induced along the triangle. The temperature dependence of the entropy and spin susceptibility of the triangle shows that this moment is screened by the conduction electrons via two separate stages at different temperatures. The two-terminal and four-terminal conductances show a clear difference at the gate voltages, where the SU(4) or the S=1 Kondo effects occurring.

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