Gate tunable non-linear currents in bilayer graphene diodes

Details Gate tunable non-linear currents in bilayer graphene diodes Gate tunable non-linear currents in bilayer graphene diodes

2012-01-05

arxiv.org/abs/1201.1105v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages

Scientific paper

10.1063/1.3676441

Electric transport of double gated bilayer graphene devices is studied as a function of charge density and bandgap. A top gate electrode can be used to control locally the Fermi level to create a pn junction between the double-gated and single-gated region. These bilayer graphene pn diodes are characterized by non-linear currents and directional current rectification, and we show the rectified direction of the source-drain voltage can be controlled by using gate voltages. A systematic study of the pn junction characteristics allows to extract a gate-dependent bandgap value which ranges from 0 meV to 130 meV.

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