Gate-induced interlayer asymmetry in ABA-stacked trilayer graphene

Details Gate-induced interlayer asymmetry in ABA-stacked trilayer graphene Gate-induced interlayer asymmetry in ABA-stacked trilayer graphene

2008-09-05

arxiv.org/abs/0809.0983v3

Phys. Rev. B 79, 125443 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 3 figures

Scientific paper

10.1103/PhysRevB.79.125443

We calculate the electronic band structure of ABA-stacked trilayer graphene in the presence of external gates, using a self-consistent Hartree approximation to take account of screening. In the absence of a gate potential, there are separate pairs of linear and parabolic bands at low energy. A gate field perpendicular to the layers breaks mirror reflection symmetry with respect to the central layer and hybridizes the linear and parabolic low-energy bands, leaving a chiral Hamiltonian essentially different from that of monolayer or bilayer graphene. Using the self-consistent Born approximation, we find that the density of states and the minimal conductivity in the presence of disorder generally increase as the gate field increases, in sharp contrast with bilayer graphene.

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