Gate Electrostatics and Quantum Capacitance of Graphene Nanoribbons

Details Gate Electrostatics and Quantum Capacitance of Graphene Nanoribbons Gate Electrostatics and Quantum Capacitance of Graphene Nanoribbons

2007-05-22

arxiv.org/abs/0705.3068v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

to appear in Nano Lett

Scientific paper

Capacitance-voltage (C-V) characteristics are important for understanding fundamental electronic structures and device applications of nanomaterials. The C-V characteristics of graphene nanoribbons (GNRs) are examined using self-consistent atomistic simulations. The results indicate strong dependence of the GNR C-V characteristics on the edge shape. For zigzag edge GNRs, highly non-uniform charge distribution in the transverse direction due to edge states lowers the gate capacitance considerably, and the self-consistent electrostatic potential significantly alters the band structure and carrier velocity. For an armchair edge GNR, the quantum capacitance is a factor of 2 smaller than its corresponding zigzag carbon nanotube, and a multiple gate geometry is less beneficial for transistor applications. Magnetic field results in pronounced oscillations on C-V characteristics.

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