Gate-dependent tunneling-induced level shifts observed in carbon nanotube quantum dots

Details Gate-dependent tunneling-induced level shifts observed in carbon nanotube quantum dots Gate-dependent tunneling-induced level shifts observed in carbon nanotube quantum dots

2007-11-30

arxiv.org/abs/0711.4913v2

Phys. Rev. B 77, 161406(R) (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevB.77.161406

We have studied electron transport in clean single-walled carbon nanotube quantum dots. Because of the large number of Coulomb blockade diamonds simultaneously showing both shell structure and Kondo effect, we are able to perform a detailed analysis of tunneling renormalization effects. Thus determining the environment induced level shifts of this artificial atom. In shells where only one of the two orbitals is coupled strongly, we observe a marked asymmetric gate-dependence of the inelastic cotunneling lines together with a systematic gate dependence of the size (and shape) of the Coulomb diamonds. These effects are all given a simple explanation in terms of second-order perturbation theory in the tunnel coupling.

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