Gate-dependent spin-torque in a nanoconductor-based spin-valve

Details Gate-dependent spin-torque in a nanoconductor-based spin-valve Gate-dependent spin-torque in a nanoconductor-based spin-valve

2011-06-17

arxiv.org/abs/1106.3540v1

Phys. Rev. B 84, 054402 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevB.84.054402

This article discusses the spin-torque effect in a spin-valve made out of two ferromagnetic leads connected through a coherent nanoconductor (NC), in the limit where a single channel of the NC lies near the Fermi energy of the leads. Due to quantum interferences inside the NC, the spin-torque presents clear qualitative differences with respect to the case of a multichannel disordered spin-valve. In particular, it can be modulated with the NC gate voltage. In principle, this modulation can be observed experimentally, assuming that the spin-torque affects a ferromagnetic nano-domain in direct contact with the NC.

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