Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2012-02-03
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
22 pages, 9 figures, includes supplementary information
Scientific paper
Quantum confined devices that manipulate single electrons in graphene are emerging as attractive candidates for nanoelectronics applications. Previous experiments have employed etched graphene nanostructures, but edge and substrate disorder severely limit device functionality. Here we present a technique that builds quantum confined structures in suspended bilayer graphene with tunnel barriers defined by external electric fields that break layer inversion symmetry, thereby eliminating both edge and substrate disorder. We report clean quantum dot formation in two regimes: at zero magnetic field B using the single particle energy gap induced by a perpendicular electric field and at B > 0 using the quantum Hall ferromagnet {\nu} = 0 gap for confinement. Coulomb blockade oscillations exhibit periodicity consistent with electrostatic simulations based on local top gate geometry, a direct demonstration of local control over the band structure of graphene. This technology integrates single electron transport with high device quality and access to vibrational modes, enabling broad applications from electromechanical sensors to quantum bits.
Allen Monica T.
Martin Jens
Yacoby Amir
No associations
LandOfFree
Gate Defined Quantum Confinement in Suspended Bilayer Graphene does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Gate Defined Quantum Confinement in Suspended Bilayer Graphene, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gate Defined Quantum Confinement in Suspended Bilayer Graphene will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-329432