Physics – Condensed Matter – Materials Science
Scientific paper
2004-06-15
Phys. Rev. B 72, 121302(R) (2005)
Physics
Condensed Matter
Materials Science
4 pages, 2 figures
Scientific paper
10.1103/PhysRevB.72.121302
The effect of a gate voltage ($V_g$) on the spin-splitting of an electronic level in a quantum dot (QD) attached to ferromagnetic leads is studied in the Kondo regime using a generalized numerical renormalization group technique. We find that the $V_g$-dependence of the QD level spin-splitting strongly depends on the shape of the density of states (DOS). For one class of DOS shapes there is nearly no $V_g$-dependence, for another, $V_g$ can be used to control the magnitude and sign of the spin-splitting, which can be interpreted as a local exchange magnetic field. We find that the spin-splitting acquires a new type of logarithmic divergence. We give an analytical explanation for our numerical results and explain how they arise due to spin-dependent charge fluctuations.
Barnas Jozef
Borda Laszlo
Bulla Ralf
Delft Jan von
Konig Jurgen
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