Gate-controlled nuclear magnetic resonance in an AlGaAs/GaAs quantum Hall device

Details Gate-controlled nuclear magnetic resonance in an AlGaAs/GaAs quantum Hall device Gate-controlled nuclear magnetic resonance in an AlGaAs/GaAs quantum Hall device

2006-08-10

arxiv.org/abs/cond-mat/0608237v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 4 figures, submitted to Appl. Phys. Lett

Scientific paper

10.1063/1.2387895

We study the resistively detected nuclear magnetic resonance (NMR) in an AlGaAs/GaAs quantum Hall device with a side gate. The strength of the hyperfine interaction between electron and nuclear spins is modulated by tuning a position of the two-dimensional electron systems with respect to the polarized nuclear spins using the side-gate voltages. The NMR frequency is systematically controlled by the gate-tuned technique in a semiconductor device.

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