Gate control of the tunneling magnetoresistance in double-barrier junctions

Details Gate control of the tunneling magnetoresistance in double-barrier junctions Gate control of the tunneling magnetoresistance in double-barrier junctions

2008-09-03

arxiv.org/abs/0809.0626v3

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Paper was written Feb. 2008. v2: minor corrections (misspelled author's name,introduction); v3: two references added

Scientific paper

We calculate the conductances and the tunneling magnetoresistance (TMR) of double magnetic tunnel junctions, taking as a model example junctions composed of Fe/ZnSe/Fe/ZnSe/Fe (001). The calculations are done as a function of the gate voltage applied to the in-between Fe layer slab. We find that the application of a gate voltage to the in-between Fe slab strongly affects the junctions' TMR due to the tuning or untuning of conductance resonances mediated by quantum well states. The gate voltage allows a significant enhancement of the TMR, in a more controllable way than by changing the thickness of the in-between Fe slab. This effect may be useful in the design of future spintronic devices based on the TMR effect, requiring large and controllable TMR values.

Affiliated with

Also associated with

No associations

Rating

Gate control of the tunneling magnetoresistance in double-barrier junctions does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Gate control of the tunneling magnetoresistance in double-barrier junctions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gate control of the tunneling magnetoresistance in double-barrier junctions will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-104790