Gate control of spin dynamics in III-V semiconductor quantum dots

Details Gate control of spin dynamics in III-V semiconductor quantum dots Gate control of spin dynamics in III-V semiconductor quantum dots

2003-06-16

arxiv.org/abs/cond-mat/0306417v2

Phys. Rev. B 68, 155330 (2003).

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

To appear in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.68.155330

We show that the g-factor and the spin-flip time T_{1} of a heterojunction quantum dot is very sensitive to the band-bending interface electric field even in the absence of wave function penetration into the barrier. When this electric field is of the order of 10^{5} V/cm, g and T_{1} show high sensitivity to dot radius and magnetic field arising from the interplay between Rashba and Dresselhaus spin-orbit interactions. This result opens new possibilities for the design of a quantum dot spin quantum computer where g-factor and T_{1} can be engineered by manipulating the spin-orbit coupling through external gates.

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