Gap Opening by Asymmetric Doping in Graphene Bilayers

Details Gap Opening by Asymmetric Doping in Graphene Bilayers Gap Opening by Asymmetric Doping in Graphene Bilayers

2010-12-11

arxiv.org/abs/1012.2495v1

Physical Review B 82, 245414 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages and 7 figures

Scientific paper

10.1103/PhysRevB.82.245414

We study the energy gap opening in the electronic spectrum of graphene bilayers caused by asym- metric doping. Both substitutional impurities (boron acceptors and nitrogen donors) and adsorbed potassium donors are considered. The gap evolution with dopant concentration is compared to the situation in which the asymmetry between the layers is induced by an external electric field. The effects of adsorbed potassium are similar to that of an electric field, but substitutional impurities behave quite differently, showing smaller band gaps and a large sensitivity to disorder and sublattice occupation.

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