Gap modification of atomically thin boron nitride by phonon mediated interactions

Details Gap modification of atomically thin boron nitride by phonon mediated interactions Gap modification of atomically thin boron nitride by phonon mediated interactions

2012-04-24

arxiv.org/abs/1204.5412v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

To appear in Nanoscale Research Letters

Scientific paper

A theory is presented for the modification of bandgaps in atomically thin boron nitride (BN) by attractive interactions mediated through phonons in a polarizable substrate, or in the BN plane. Gap equations are solved, and gap enhancements are found to range up to 70% for dimensionless electron-phonon coupling \lambda=1, indicating that a proportion of the measured BN bandgap may have a phonon origin.

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