GaN/AlN Quantum Dots for Single Qubit Emitters

Details GaN/AlN Quantum Dots for Single Qubit Emitters GaN/AlN Quantum Dots for Single Qubit Emitters

2008-07-31

arxiv.org/abs/0807.5024v2

J. Phys.: Condens. Matter 20, 454211 (2008)

Physics

Condensed Matter

Materials Science

6 pages, 9 figures. Accepted at Journal of Physics: Condensed Matter

Scientific paper

10.1088/0953-8984/20/45/454211

We study theoretically the electronic properties of $c$-plane GaN/AlN quantum dots (QDs) with focus on their potential as sources of single polarized photons for future quantum communication systems. Within the framework of eight-band k.p theory we calculate the optical interband transitions of the QDs and their polarization properties. We show that an anisotropy of the QD confinement potential in the basal plane (e.g. QD elongation or strain anisotropy) leads to a pronounced linear polarization of the ground state and excited state transitions. An externally applied uniaxial stress can be used to either induce a linear polarization of the ground-state transition for emission of single polarized photons or even to compensate the polarization induced by the structural elongation.

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