GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier

Details GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier

2009-12-16

arxiv.org/abs/0912.3045v1

Physics

Condensed Matter

Materials Science

12 pages, 3 figures, accepted for publication in Appl. Phys. Lett

Scientific paper

We investigate the spin-dependent transport of GaMnAs-based magnetic tunnel junctions (MTJs) containing a paramagnetic AlMnAs barrier with various thicknesses. The barrier height of AlMnAs with respect to the Fermi level of GaMnAs is estimated to be 110 meV. We observe tunneling magnetoresistance (TMR) ratios up to 175% (at 2.6 K), which is higher than those of the GaMnAs-based MTJs with other barrier materials in the same temperature region. These high TMR ratios can be mainly attributed to the relatively high crystal quality of AlMnAs and the suppression of the tunneling probability near at the in-plane wave-vector k||=0.

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