Gamma radiation exposure of MCT diode arrays

Details Gamma radiation exposure of MCT diode arrays Gamma radiation exposure of MCT diode arrays

2006-01-13

arxiv.org/abs/cond-mat/0601276v1

Semicond.Sci.Tehnol. vol.21, No.3, p.358-363 (2006)

Physics

Condensed Matter

Materials Science

11 pages, 4 figures, submitted to Semiconductor Science and Technology

Scientific paper

10.1088/0268-1242/21/3/026

Investigations of electrical properties of long-wavelength infrared (LWIR) mercury cadmium telluride (MCT) arrays exposed to gamma-radiation have been performed. Resistance-area product characteristics of LWIR n{+}-p photodiodes have been investigated using microprobe technique at T=78 K before and after an exposure to various doses of gamma-radiation. The current transport mechanisms for those structures are described within the framework of the balance equation model taking into account the occupation of the trap states in the band gap.

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