Gain Dependence of the Noise in the Single Electron Transistor

Details Gain Dependence of the Noise in the Single Electron Transistor Gain Dependence of the Noise in the Single Electron Transistor

1998-06-29

arxiv.org/abs/cond-mat/9806354v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, LaTex 2.09, 4 figures (epsfig)

Scientific paper

10.1063/1.371020

An extensive investigation of low frequency noise in single electron transistors as a function of gain is presented. Comparing the output noise with gain for a large number of bias points, it is found that the noise is dominated by external charge noise. For low gains we find an additional noise contribution which is compared to a model including resistance fluctuations. We conclude that this excess noise is not only due to resistance fluctuations. For one sample, we find a record low minimum charge noise of qn = 9*10^-6 e/sqrt(Hz) in the superconducting state and qn = 9*10^-6 e/sqrt(Hz) in the normal state at a frequency of 4.4 kHz.

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