GaAs photonic crystal cavity with ultra-high Q: microwatt nonlinearity at 1.55 $μ$m

Details GaAs photonic crystal cavity with ultra-high Q: microwatt nonlinearity at 1.55 $μ$m GaAs photonic crystal cavity with ultra-high Q: microwatt nonlinearity at 1.55 $μ$m

2008-04-02

arxiv.org/abs/0804.0378v2

Physics

Condensed Matter

Materials Science

3 pages, 2 figures, accepted for publication in Optics Letters

Scientific paper

10.1364/OL.33.001908

We have realized and measured a GaAs nanocavity in a slab photonic crystal based on the design by Kuramochi et al. [Appl. Phys.Lett., \textbf{88}, 041112, (2006)]. We measure a quality factor Q=700,000, which proves that ultra-high Q nanocavities are also feasible in GaAs. We show that, due to larger two-photon absorption (TPA) in GaAs, nonlinearities appear at the microwatt-level and will be more functional in gallium arsenide than in silicon nanocavities.

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