GaAs/AlGaAs multi-quantum-well far-infrared photodetectors grown by the MOVPE process

Details GaAs/AlGaAs multi-quantum-well far-infrared photodetectors grown by the MOVPE process GaAs/AlGaAs multi-quantum-well far-infrared photodetectors grown by the MOVPE process

Dec 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1735..204m&link_type=abstract

Proc. SPIE Vol. 1735, p. 204-207, Infrared Detectors: State of the Art, Wagih H. Makky; Ed.

Physics

Scientific paper

We demonstrate that GaAs/AlGaAs multiple-quantum-well (MQW) structures grown by atmospheric pressure metalorganic vapor phase epitaxy have state-of-the-art structural, optical, and electrical properties. The 50-well MQW structures, with well thicknesses ranging from 14 to 90 angstroms, were analyzed by atomic resolution transmission electron microscopy, photoluminescence, and deep-level transient spectroscopy with the aid of a theoretical model for the eigenstates of the MQWs. It is shown that the MQW structures have a layer-to-layer thickness uniformity, interface roughness, and heterojunction abruptness of only one monolayer. A selectively doped MQW structure shows an infrared absorption efficiency of 15% at a wavelength of 11 micrometers .

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