Fundamental Curie temperature limit in ferromagnetic GaMnAs

Details Fundamental Curie temperature limit in ferromagnetic GaMnAs Fundamental Curie temperature limit in ferromagnetic GaMnAs

2003-03-12

arxiv.org/abs/cond-mat/0303217v1

Physics

Condensed Matter

Materials Science

14 pages, 3 figures

Scientific paper

10.1103/PhysRevB.68.041308

We provide experimental evidence that the upper limit of ~110 K commonly observed for the Curie temperature T_C of Ga(1-x)Mn(x)As is caused by the Fermi-level-induced hole saturation. Ion channeling, electrical and magnetization measurements on a series of Ga(1-x-y)Mn(x)Be(y)As layers show a dramatic increase of the concentration of Mn interstitials accompanied by a reduction of T_C with increasing Be concentration, while the free hole concentration remains relatively constant at ~5x10^20 cm^-3. These results indicate that the concentrations of free holes and ferromagnetically active Mn spins are governed by the position of the Fermi level, which controls the formation energy of compensating interstitial Mn donors.

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