Fundamental asymmetry in interfacial electronic reconstruction between insulating oxides

Details Fundamental asymmetry in interfacial electronic reconstruction between insulating oxides Fundamental asymmetry in interfacial electronic reconstruction between insulating oxides

2009-04-30

arxiv.org/abs/0904.4734v1

Physical Review B 79, 161402(R) (2009)

Physics

Condensed Matter

Materials Science

4 pages, 3 figures and 1 table

Scientific paper

10.1103/PhysRevB.79.161402

We present an ab initio study of the (001) interfaces between two insulating perovskites, the polar LaAlO3 and the nonpolar SrTiO3. We observe an insulating-to-metallic transition above a critical LaAlO3 thickness. We explain that the high conductivity observed at the TiO2 /LaO interface and the lack of similar conductivity at the SrO/AlO2 interface are inherent in the atomic geometry of the system. A large interfacial hopping matrix element between cations causes the formation of a bound electron state at the TiO2 /LaO interface. This mechanism for the formation of interfacial bound states suggests a robust means for tuning conductivities at various oxide heterointerfaces.

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