Fully Overheated Single-Electron Transistor

Details Fully Overheated Single-Electron Transistor Fully Overheated Single-Electron Transistor

2009-12-15

arxiv.org/abs/0912.2832v1

Phys. Rev. Lett. 104, 196805 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages, 3 figures, includes Appendix

Scientific paper

10.1103/PhysRevLett.104.196805

We consider the fully overheated single-electron transistor, where the heat balance is determined entirely by electron transfers. We find three distinct transport regimes corresponding to cotunneling, single-electron tunneling, and a competition between the two. We find an anomalous sensitivity to temperature fluctuations at the crossover between the two latter regimes that manifests in an exceptionally large Fano factor of current noise.

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