Full spin switch effect for the superconducting current in a superconductor/ferromagnet thin film heterostructure

Details Full spin switch effect for the superconducting current in a superconductor/ferromagnet thin film heterostructure Full spin switch effect for the superconducting current in a superconductor/ferromagnet thin film heterostructure

2010-07-15

arxiv.org/abs/1007.2511v1

Physics

Condensed Matter

Superconductivity

5 pages, 4 figures

Scientific paper

Superconductor/ferromagnet (S/F) proximity effect theory predicts that the superconducting critical temperature of the F1/F2/S or F1/S/F2 trilayers for the parallel orientation of the F1 and F2 magnetizations is smaller than for the antiparallel one. This suggests a possibility of a controlled switching between the superconducting and normal states in the S layer. Here, using the spin switch design F1/F2/S theoretically proposed by Oh et al. [Appl. Phys. Lett. 71, 2376 (1997)], that comprises a ferromagnetic bilayer separated by a non-magnetic metallic spacer layer as a ferromagnetic component, and an ordinary superconductor as the second interface component, we have successfully realized a full spin switch effect for the superconducting current.

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