Full first-principles theory of spin relaxation in group-IV materials

Details Full first-principles theory of spin relaxation in group-IV materials Full first-principles theory of spin relaxation in group-IV materials

2010-10-26

arxiv.org/abs/1010.5436v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

We present a systematic parameter-free first-principles method to determine the electronic spin relaxation times in the technologically important group-IV materials (silicon, diamond, graphite). We concentrate on spin relaxation induced by momentum scattering off phonons, which defines the upper limit for the spin relaxation time dominated by the Elliott-Yafet (EY) mechanism. In silicon, we find a $\sim T^{-3}$ temperature dependence of the spin relaxation time T$_1$ and a room-temperature relaxation time $T_1$(300 K) = 7.7 ns, in agreement with experiments. For diamond and graphite, we predict a stronger $\sim T^{-5}$ dependence of $T_1$ that limits $T_1$ (300 K) to 180 and $0.1$ ns, respectively. A key relevant aspect of this study is that, by foregoing the phenomenological fitting of pseudo-potentials, we provide a method to study {\em any} type of impurity and their effect on spin-transport.

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