Full Counting Statistics of Multiple Andreev Reflections in incoherent diffusive superconducting junctions

Physics – Condensed Matter – Mesoscale and Nanoscale Physics

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Included in special issue Spin Physics of Superconducting heterostructures of Applied Physics A: Materials Science & Processin

Scientific paper

10.1007/s00339-007-4191-6

We present a theory for the full distribution of current fluctuations in incoherent diffusive superconducting junctions, subjected to a voltage bias. This theory of full counting statistics of incoherent multiple Andreev reflections is valid for arbitrary applied voltage. We present a detailed discussion of the properties of the first four cumulants as well as the low and high voltage regimes of the full counting statistics. The work is an extension of the results of Pilgram and the author, Phys. Rev. Lett. 94, 086806 (2005).

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