Full counting-statistics in a single-electron transistor in the presence of nonequilibrium quantum fluctuations of charge

Details Full counting-statistics in a single-electron transistor in the presence of nonequilibrium quantum fluctuations of charge Full counting-statistics in a single-electron transistor in the presence of nonequilibrium quantum fluctuations of charge

2005-03-29

arxiv.org/abs/cond-mat/0503653v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 1 figure

Scientific paper

Using the Schwinger-Keldysh approach and the drone (Majorana) fermion representation, we evaluate current distribution in a single-electron transistor in a regime where a total tunnel resistance is small. Nonequilibrium quantum fluctuations of charge induce a lifetime broadening of charge-state level, as well as renormalization of system parameters. We find that the lifetime broadening effect may suppress the probability of relatively large current.

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