Full configuration interaction approach to the few-electron problem in artificial atoms

Physics – Condensed Matter – Strongly Correlated Electrons

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

RevTeX 4.0, 18 pages, 6 tables, 9 postscript b/w figures. Final version with new material. Section 6 on the excitation spectru

Scientific paper

10.1063/1.2179418

We present a new high-performance configuration interaction code optimally designed for the calculation of the lowest energy eigenstates of a few electrons in semiconductor quantum dots (also called artificial atoms) in the strong interaction regime. The implementation relies on a single-particle representation, but it is independent of the choice of the single-particle basis and, therefore, of the details of the device and configuration of external fields. Assuming no truncation of the Fock space of Slater determinants generated from the chosen single-particle basis, the code may tackle regimes where Coulomb interaction very effectively mixes many determinants. Typical strongly correlated systems lead to very large diagonalization problems; in our implementation, the secular equation is reduced to its minimal rank by exploiting the symmetry of the effective-mass interacting Hamiltonian, including square total spin. The resulting Hamiltonian is diagonalized via parallel implementation of the Lanczos algorithm. The code gives access to both wave functions and energies of first excited states. Excellent code scalability in a parallel environment is demonstrated; accuracy is tested for the case of up to eight electrons confined in a two-dimensional harmonic trap as the density is progressively diluted and correlation becomes dominant. Comparison with previous Quantum Monte Carlo simulations in the Wigner regime demonstrates power and flexibility of the method.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

Full configuration interaction approach to the few-electron problem in artificial atoms does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Full configuration interaction approach to the few-electron problem in artificial atoms, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Full configuration interaction approach to the few-electron problem in artificial atoms will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-613997

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.