Full 3D Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs

Details Full 3D Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs Full 3D Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs

2010-11-15

arxiv.org/abs/1011.3285v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

The influence of interface roughness scattering (IRS) on the performances of silicon nanowire field-effect transistors (NWFETs) is numerically investigated using a full 3D quantum transport simulator based on the atomistic sp3d5s* tight-binding model. The interface between the silicon and the silicon dioxide layers is generated in a real-space atomistic representation using an experimentally derived autocovariance function (ACVF). The oxide layer is modeled in the virtual crystal approximation (VCA) using fictitious SiO2 atoms. <110>-oriented nanowires with different diameters and randomly generated surface configurations are studied. The experimentally observed ON-current and the threshold voltage is quantitatively captured by the simulation model. The mobility reduction due to IRS is studied through a qualitative comparison of the simulation results with the experimental results.

Affiliated with

Also associated with

No associations

Rating

Full 3D Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Full 3D Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Full 3D Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-298145