From the Kondo Regime to the Mixed-Valence Regime in a Single-Electron Transistor

Details From the Kondo Regime to the Mixed-Valence Regime in a Single-Electron Transistor From the Kondo Regime to the Mixed-Valence Regime in a Single-Electron Transistor

1998-07-15

arxiv.org/abs/cond-mat/9807233v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages plus one 2 page postscript file of 5 figures. Submitted to PRL

Scientific paper

10.1103/PhysRevLett.81.5225

We demonstrate that the conductance through a single-electron transistor at low temperature is in quantitative agreement with predictions of the equilibrium Anderson model. When an unpaired electron is localized within the transistor, the Kondo effect is observed. Tuning the unpaired electron's energy toward the Fermi level in nearby leads produces a cross-over between the Kondo and mixed-valence regimes of the Anderson model.

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