Frenkel-Kontorova Model of Vacancy-Line Interactions on Ga/Si(112): Formalism

Details Frenkel-Kontorova Model of Vacancy-Line Interactions on Ga/Si(112): Formalism Frenkel-Kontorova Model of Vacancy-Line Interactions on Ga/Si(112): Formalism

1999-05-12

arxiv.org/abs/cond-mat/9905150v2

Phys. Rev. Lett. 83, 1818 (1999)

Physics

Condensed Matter

Materials Science

4 pages, 4 figures, to appear in Phys. Rev. Lett; this version includes a 4-page appendix giving the full solution of the Fren

Scientific paper

10.1103/PhysRevLett.83.1818

We describe in greater detail the exactly solvable microscopic model we have developed for analyzing the strain-mediated interaction of vacancy lines in a pseudomorphic adsorbate system (Phys. Rev. Lett., to appear). The model is applied to Ga/Si(112) by extracting values for the microscopic parameters from total-energy calculations. The results, which are in good agreement with experimental observations, reveal an unexpectedly complex interplay between compressive and tensile strain within the mixed Ga-Si surface layer.

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