Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures

Details Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures

1998-09-30

arxiv.org/abs/cond-mat/9809409v1

Physics

Condensed Matter

Materials Science

RevTeX 4 pages, 4 figures

Scientific paper

10.1063/1.123727

The free-carrier screening of macroscopic polarization fields in wurtzite GaN/InGaN quantum wells lasers is investigated via a self-consistent tight-binding approach. We show that the high carrier concentrations found experimentally in nitride laser structures effectively screen the built-in spontaneous and piezoelectric polarization fields, thus inducing a ``field-free'' band profile. Our results explain some heretofore puzzling experimental data on nitride lasers, such as the unusually high lasing excitation thresholds and emission blue-shifts for increasing excitation levels.

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