Free carrier effects in gallium nitride epilayers: the valence band dispersion

Details Free carrier effects in gallium nitride epilayers: the valence band dispersion Free carrier effects in gallium nitride epilayers: the valence band dispersion

2001-05-16

arxiv.org/abs/cond-mat/0105315v1

Physics

Condensed Matter

Materials Science

Revtex, 4 pages, 5 figures

Scientific paper

10.1103/PhysRevB.64.081203

The dispersion of the A-valence-band in GaN has been deduced from the observation of high-index magneto-excitonic states in polarised interband magneto-reflectivity and is found to be strongly non-parabolic with a mass in the range 1.2-1.8 m_{e}. It matches the theory of Kim et al. [Phys. Rev. B 56, 7363 (1997)] extremely well, which also gives a strong k-dependent A-valence-band mass. A strong phonon coupling leads to quenching of the observed transitions at an LO-phonon energy above the band gap and a strong non-parabolicity. The valence band was deduced from subtracting from the reduced dispersion the electron contribution with a model that includes a full treatment of the electron-phonon interaction.

Affiliated with

Also associated with

No associations

Rating

Free carrier effects in gallium nitride epilayers: the valence band dispersion does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Free carrier effects in gallium nitride epilayers: the valence band dispersion, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Free carrier effects in gallium nitride epilayers: the valence band dispersion will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-151248