Fractional quantum Hall effect in CdTe

Details Fractional quantum Hall effect in CdTe Fractional quantum Hall effect in CdTe

2010-06-04

arxiv.org/abs/1006.0908v1

PhysRevB.82.081307 (R) 2010

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Submitted

Scientific paper

10.1103/PhysRevB.82.081307

The fractional quantum Hall (FQH) effect is reported in a high mobility CdTe quantum well at mK temperatures. Fully-developed FQH states are observed at filling factor 4/3 and 5/3 and are found to be both spin-polarized ground state for which the lowest energy excitation is not a spin-flip. This can be accounted for by the relatively high intrinsic Zeeman energy in this single valley 2D electron gas. FQH minima are also observed in the first excited (N=1) Landau level at filling factor 7/3 and 8/3 for intermediate temperatures.

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