Fractional Quantum Hall Effect at High Fillings in a Two-subband Electron System

Details Fractional Quantum Hall Effect at High Fillings in a Two-subband Electron System Fractional Quantum Hall Effect at High Fillings in a Two-subband Electron System

2010-04-06

arxiv.org/abs/1004.0979v2

Phys. Rev. Lett. 105, 246805 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

Magneto-transport measurements in a clean two-dimensional electron system confined to a wide GaAs quantum well reveal that, when the electrons occupy two electric subbands, the sequences of fractional quantum Hall states observed at high fillings ($\nu > 2$) are distinctly different from those of a single-subband system. Notably, when the Fermi energy lies in the ground state Landau level of either of the subbands, no quantum Hall states are seen at the even-denominator $\nu$ = 5/2 and 7/2 fillings; instead the observed states are at $\nu = (i + p/(2p \pm 1))$ where $i$ = 2, 3, and $p$ = 1, 2, 3, and include several new states at $\nu$ = 13/5, 17/5, 18/5, and 25/7.

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