Fractal-Mound Growth of Pentacene Thin Films

Details Fractal-Mound Growth of Pentacene Thin Films Fractal-Mound Growth of Pentacene Thin Films

2006-10-19

arxiv.org/abs/cond-mat/0610527v1

Phys. Rev. B 74, 245410 (2006)

Physics

Condensed Matter

Soft Condensed Matter

(5 Figures). Accepted to PR B (in print)

Scientific paper

10.1103/PhysRevB.74.245410

The growth mechanism of pentacene film formation on SiO2 substrate was investigated with a combination of atomic force microscopy measurements and numerical modeling. In addition to the diffusion-limited aggregation (DLA) that has already been shown to govern the growth of the ordered pentacene thin films, it is shown here for the first time that the Schwoebel barrier effect steps in and disrupts the desired epitaxial growth for the subsequent layers, leading to mound growth. The terraces of the growing mounds have a fractal dimension of 1.6, indicating a lateral DLA shape. This novel growth morphology thus combines horizontal DLA-like growth with vertical mound growth.

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