Formation of p-n junction in polymer electrolyte-top gated bilayer graphene transistor

Details Formation of p-n junction in polymer electrolyte-top gated bilayer graphene transistor Formation of p-n junction in polymer electrolyte-top gated bilayer graphene transistor

2009-09-05

arxiv.org/abs/0909.1042v1

Nanotechnology 20 (2009) 365203

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

16 pages, 6 figures

Scientific paper

10.1088/0957-4484/20/36/365203

We show simultaneous p and n type carrier injection in bilayer graphene channel by varying the longitudinal bias across the channel and the top gate voltage. The top gate is applied electrochemically using solid polymer electrolyte and the gate capacitance is measured to be 1.5 $\mu F/cm^2$, a value about 125 times higher than the conventional SiO$_2$ back gate capacitance. Unlike the single layer graphene, the drain-source current does not saturate on varying the drain-source bias voltage. The energy gap opened between the valence and conduction bands using top and back gate geometry is estimated.

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