Formation of InAs Self-Assembled Quantum Rings on InP

Details Formation of InAs Self-Assembled Quantum Rings on InP Formation of InAs Self-Assembled Quantum Rings on InP

2002-10-29

arxiv.org/abs/cond-mat/0210631v1

Physics

Condensed Matter

13 pages, including 2 figures and 1 table. Submitted to Appl. Phys. Lett

Scientific paper

10.1063/1.1560868

Shape transformations of partially capped self-assembled InAs quantum dots grown on InP are studied. Atomic force microscopy images show large anisotropic redistribution of the island material after coverage by a 1 nm thick InP layer. The anisotropic material redistribution occurs within a few minutes and leads to a change from lens-like to elongated ring-like islands. The shape transformation is not accompanied by dot material compositional change. The formation of InAs/InP quantum rings disagrees with a previous model of InAs/GaAs ring formation that assumes that the driving force for the dot to ring transformation is the difference in surface diffusion velocity of indium and gallium atoms.

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