Physics – Condensed Matter – Materials Science
Scientific paper
2010-03-30
J. Vac. Sci. Technol. B 28, C5C1 (2010)
Physics
Condensed Matter
Materials Science
To appear in J. Vac. Sci. Technol. B
Scientific paper
The formation of graphene on the (0001) surface of SiC (the Si-face) is studied by atomic force microscopy, low-energy electron microscopy, and scanning tunneling microscopy/spectroscopy. The graphene forms due to preferential sublimation of Si from the surface at high temperature, and the formation has been studied in both high-vacuum and 1-atm-argon environments. In vacuum, a few monolayers of graphene forms at temperatures around 1400 C, whereas in argon a temperature of about 1600 C is required in order to obtain a single graphene monolayer. In both cases considerable step motion on the surface is observed, with the resulting formation of step bunches separated laterally by >10 microns. Between the step bunches, layer-by-layer growth of the graphene is found. The presence of a disordered, secondary graphitic phase on the surface of the graphene is also identified.
Feenstra R. M.
Fisher P. J.
Luxmi
Srivastava Namita
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