Formation of Co/Ge intermixing layers after Co deposition on Ge(111)2x1 surfaces

Details Formation of Co/Ge intermixing layers after Co deposition on Ge(111)2x1 surfaces Formation of Co/Ge intermixing layers after Co deposition on Ge(111)2x1 surfaces

2012-01-03

arxiv.org/abs/1201.0735v1

Physics

Condensed Matter

Materials Science

9 pages, 8 figures

Scientific paper

The formation of a novel surface reconstruction upon Co deposition on freshly cleaved Ge(111)2x1 surfaces is studied by means of scanning tunneling microscopy (STM) at low temperature. The deposited Co atoms are immobile at substrate temperatures of 4.5K, while they can diffuse along the upper pi-bonded chains at a temperature of 80K and higher. This mobility results in accumulation of Co atoms at atomic steps, at domain boundaries as well as on atomically flat Ge terraces at, e.g., vacancies or adatoms, where reconstructed Co/Ge intermixing layers are formed. Voltage dependent STM images reveal that the newly reconstructed surface locally exhibits a highly ordered atomic structure, having the same periodicity as that of the initial 2x1 reconstruction. In addition, it shows a double periodicity along the [2-1-1] direction, which can be related to the modified electronic properties of the pi-bonded chains.

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