Formation of atom wires on vicinal silicon

Details Formation of atom wires on vicinal silicon Formation of atom wires on vicinal silicon

2004-04-13

arxiv.org/abs/cond-mat/0404285v1

Physics

Condensed Matter

Materials Science

submitted

Scientific paper

10.1103/PhysRevLett.93.126106

The formation of atomic wires via pseudomorphic step-edge decoration on vicinal silicon surfaces has been analyzed for Ga on the Si(112) surface using Scanning Tunneling Microscopy and Density Functional Theory calculations. Based on a chemical potential analysis involving more than thirty candidate structures and considering various fabrication procedures, it is concluded that pseudomorphic growth on stepped Si(112), both under equilibrium and non-equilibrium conditions, must favor formation of Ga zig-zag chains rather than linear atom chains. The surface is non-metallic and presents quasi-one dimensional character in the lowest conduction band.

Affiliated with

Also associated with

No associations

Rating

Formation of atom wires on vicinal silicon does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Formation of atom wires on vicinal silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Formation of atom wires on vicinal silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-247055