Formation and self-assembly of coherent quantum dots: some thermodynamic aspects

Details Formation and self-assembly of coherent quantum dots: some thermodynamic aspects Formation and self-assembly of coherent quantum dots: some thermodynamic aspects

2004-04-28

arxiv.org/abs/cond-mat/0404673v2

Chapter in "Quantum Dots: Research Developments", Ed. Peter A. Ling. Series: Horizons in World Physics Vol. 251, pp. 123-147 (

Physics

Condensed Matter

Materials Science

25 pages, 16 figures. Final version, minor changes

Scientific paper

Quantum dots have promising properties for optoelectronic applications. They can be grown free of dislocations in highly mismatched epitaxy in the coherent Stranski-Krastanov mode. In this chapter, some thermodynamic aspects related to the wetting in the growth and self-assembly of three-dimensional (3D) coherent islands are studied using an energy minimization scheme in a 1+1-dimensional atomic model with anharmonic interactions. The conditions for equilibrium between the different phases are discussed. It is found that the thermodynamic driving force for 3D-cluster formation is the reduced adhesion of the islands to the wetting layer at their edges. In agreement with experimental observations, for values of the lattice mismatch larger than a critical misfit, a critical island size for the 2D-3D transition is found. Beyond it, monolayer islands become unstable against bilayer ones. Compressed coherent overlayers show a greater tendency to clustering than expanded ones. The transition to 3D islands takes place through a series of intermediate stable states with thicknesses discretely increasing in monolayer steps. Special emphasis is made on the analysis of the critical misfit. Additionally, the effect of neighbouring islands mediated through a deformable wetting layer is considered. The degree of wetting of the substrate by a given island depends on the size and shape distributions of the neighbouring islands. Implications for the self-assembled growth of quantum dots are discussed.

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