Focused-ion-beam-induced deposition of superconducting nanowires

Details Focused-ion-beam-induced deposition of superconducting nanowires Focused-ion-beam-induced deposition of superconducting nanowires

2004-10-19

arxiv.org/abs/cond-mat/0410477v1

Appl. Phys. Lett. 85, 6206 (2004)

Physics

Condensed Matter

Superconductivity

Accepted for publication in Applied Physics Letters

Scientific paper

10.1063/1.1842367

Superconducting nanowires, with a critical temperature of 5.2 K, have been synthesized using an ion-beam-induced deposition, with a Gallium focused ion beam and Tungsten Carboxyl, W(CO)6, as precursor. The films are amorphous, with atomic concentrations of about 40, 40, and 20 % for W, C, and Ga, respectively. Zero Kelvin values of the upper critical field and coherence length of 9.5 T and 5.9 nm, respectively, are deduced from the resistivity data at different applied magnetic fields. The critical current density is Jc= 1.5 10^5 A/cm2 at 3 K. This technique can be used as a template-free fabrication method for superconducting devices.

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