First-principles calculation of the effect of strain on the diffusion of Ge adatoms on Si and Ge (001) surfaces

Details First-principles calculation of the effect of strain on the diffusion of Ge adatoms on Si and Ge (001) surfaces First-principles calculation of the effect of strain on the diffusion of Ge adatoms on Si and Ge (001) surfaces

2003-01-13

arxiv.org/abs/cond-mat/0301195v1

Physics

Condensed Matter

Statistical Mechanics

4 pages, 4 figures

Scientific paper

10.1103/PhysRevB.67.041308

First-principles calculations are used to calculate the strain dependencies of the binding and diffusion-activation energies for Ge adatoms on both Si(001) and Ge(001) surfaces. Our calculations reveal that the binding and activation energies on a strained Ge(001) surface increase and decrease, respectively, by 0.21 eV and 0.12 eV per percent compressive strain. For a growth temperature of 600 degrees C, these strain-dependencies give rise to a 16-fold increase in adatom density and a 5-fold decrease in adatom diffusivity in the region of compressive strain surrounding a Ge island with a characteristic size of 10 nm.

Affiliated with

Also associated with

No associations

Rating

First-principles calculation of the effect of strain on the diffusion of Ge adatoms on Si and Ge (001) surfaces does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with First-principles calculation of the effect of strain on the diffusion of Ge adatoms on Si and Ge (001) surfaces, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and First-principles calculation of the effect of strain on the diffusion of Ge adatoms on Si and Ge (001) surfaces will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-323394