Fine and Large Coulomb Diamonds in a Silicon Quantum Dot

Details Fine and Large Coulomb Diamonds in a Silicon Quantum Dot Fine and Large Coulomb Diamonds in a Silicon Quantum Dot

2009-05-08

arxiv.org/abs/0905.1173v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures, to appear in Jpn. J. Appl. Phys

Scientific paper

We experimentally study the transport properties of silicon quantum dots (QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements using a low temperature complementary metal-oxide-semiconductor (LTCMOS) amplifier are performed at 4.2 K in liquid helium. Two series of Coulomb peaks are observed: long-period oscillations and fine structures, and both of them show clear source drain voltage dependence. We also observe two series of Coulomb diamonds having different periodicity. The obtained experimental results are well reproduced by a master equation analysis using a model of double QDs coupled in parallel.

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