Field-Induced Resistive Switching in Metal-Oxide Interfaces

Details Field-Induced Resistive Switching in Metal-Oxide Interfaces Field-Induced Resistive Switching in Metal-Oxide Interfaces

2004-02-27

arxiv.org/abs/cond-mat/0402687v1

Physics

Condensed Matter

Superconductivity

4 pages, 3 figures

Scientific paper

10.1063/1.1768305

We investigate the polarity-dependent field-induced resistive switching phenomenon driven by electric pulses in perovskite oxides. Our data show that the switching is a common occurrence restricted to an interfacial layer between a deposited metal electrode and the oxide. We determine through impedance spectroscopy that the interfacial layer is no thicker than 10 nm and that the switch is accompanied by a small capacitance increase associated with charge accumulation. Based on interfacial I-V characterization and measurement of the temperature dependence of the resistance, we propose that a field-created crystalline defect mechanism, which is controllable for devices, drives the switch.

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