Field-effect tunneling transistor based on vertical graphene heterostructures

Details Field-effect tunneling transistor based on vertical graphene heterostructures Field-effect tunneling transistor based on vertical graphene heterostructures

2011-12-21

arxiv.org/abs/1112.4999v1

Science 335 (6071) 947-950 (2012)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1126/science.1218461

We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devices are graphene heterostructures with atomically thin boron nitride acting as a tunnel barrier. They exhibit room temperature switching ratios ~50, a value that can be enhanced further by optimizing the device structure. These devices have potential for high frequency operation and large scale integration.

Affiliated with

Also associated with

No associations

Rating

Field-effect tunneling transistor based on vertical graphene heterostructures does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Field-effect tunneling transistor based on vertical graphene heterostructures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field-effect tunneling transistor based on vertical graphene heterostructures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-191714